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On May 22, Dr.
Wan Yuepeng, CTO of GCL-Poly, pointed out that in the past four or five years, the improvement of polycrystalline product efficiency mainly comes from the improvement of crystal structure, and has achieved obvious results, and the improvement of polycrystalline efficiency in the future will come more from the improvement
of suede structure.
Dr.
Wan said that polycrystalline products have long occupied the mainstream
of the market with their cost-effective advantages.
This advantage comes mainly from the increase in the size of the ingot, as well as the improvement
of the crystal structure.
The data shows that in the process of upgrading the ingot furnace from G5 to G6, product yield, output and energy consumption have improved, and ultimately the average cost has been reduced by about 17%.
At the same time, polycrystalline has made great strides in optimizing crystal structure, driving conversion efficiency improvements of more than
1%.
Today, the difference in efficiency between polycrystalline and monocrystalline in terms of crystal defects has been greatly reduced to about 0.
2%, which is very close to the level of
monocrystal.
In terms of surface reflectivity, there is still an efficiency difference of about 0.
5% between polycrystalline and single crystalline, which will become the main direction
of polycrystalline technology to improve conversion efficiency in the future.
Dr.
Wan further pointed out that black silicon technology has become an ideal solution
for high-efficiency polysilicon technology in the future because it can significantly improve the surface structure of polysilicon wafers and significantly reduce processing costs with the help of diamond wire slicing technology.
Among them, dry (RIE) black silicon can promote the efficiency of cells by 0.
4%-0.
6%, and wet (MCCE) black silicon can promote the efficiency of cells by 0.
2%-0.
4%.
Dr.
Wan cited data to point out that in recent years, many advances in monocrystalline technology have greatly reduced costs, putting pressure on multicrystalline products that dominate the market with cost-effective advantages, and multicrystalline technology urgently needs to make new breakthroughs
.
In addition to black silicon technology and diamond wire slicing processes, polycrystalline technology can continue to increase ingot size and wafer size, and investigate the application of
PERC cell technology.
Today, companies have applied polycrystalline black silicon wafers and PERC technology, which can reach a conversion efficiency of 20.
5% after mass production, indicating that this technology has great application prospects
.
In terms of ingot furnace upgrades, the upgrade of G6 to G7 will also reduce the cost by 12%, further improving the cost advantage
of multi-Si wafers.
Overall, the cost-effective advantage of multi-Si products is the key to their dominance in the market, and Dr.
Wan emphasized that with the upgrading of technology, there is still much room
for improvement in conversion efficiency and cost of multi-Si wafers.
It is foreseeable that in the next five years, multi-Si wafers will also dominate the market
.
On May 22, Dr.
Wan Yuepeng, CTO of GCL-Poly, pointed out that in the past four or five years, the improvement of polycrystalline product efficiency mainly comes from the improvement of crystal structure, and has achieved obvious results, and the improvement of polycrystalline efficiency in the future will come more from the improvement
of suede structure.
Dr.
Wan said that polycrystalline products have long occupied the mainstream
of the market with their cost-effective advantages.
This advantage comes mainly from the increase in the size of the ingot, as well as the improvement
of the crystal structure.
The data shows that in the process of upgrading the ingot furnace from G5 to G6, product yield, output and energy consumption have improved, and ultimately the average cost has been reduced by about 17%.
At the same time, polycrystalline has made great strides in optimizing crystal structure, driving conversion efficiency improvements of more than
1%.
Today, the difference in efficiency between polycrystalline and monocrystalline in terms of crystal defects has been greatly reduced to about 0.
2%, which is very close to the level of
monocrystal.
In terms of surface reflectivity, there is still an efficiency difference of about 0.
5% between polycrystalline and single crystalline, which will become the main direction
of polycrystalline technology to improve conversion efficiency in the future.
Dr.
Wan further pointed out that black silicon technology has become an ideal solution
for high-efficiency polysilicon technology in the future because it can significantly improve the surface structure of polysilicon wafers and significantly reduce processing costs with the help of diamond wire slicing technology.
Among them, dry (RIE) black silicon can promote the efficiency of cells by 0.
4%-0.
6%, and wet (MCCE) black silicon can promote the efficiency of cells by 0.
2%-0.
4%.
Dr.
Wan cited data to point out that in recent years, many advances in monocrystalline technology have greatly reduced costs, putting pressure on multicrystalline products that dominate the market with cost-effective advantages, and multicrystalline technology urgently needs to make new breakthroughs
.
In addition to black silicon technology and diamond wire slicing processes, polycrystalline technology can continue to increase ingot size and wafer size, and investigate the application of
PERC cell technology.
Today, companies have applied polycrystalline black silicon wafers and PERC technology, which can reach a conversion efficiency of 20.
5% after mass production, indicating that this technology has great application prospects
.
In terms of ingot furnace upgrades, the upgrade of G6 to G7 will also reduce the cost by 12%, further improving the cost advantage
of multi-Si wafers.
Overall, the cost-effective advantage of multi-Si products is the key to their dominance in the market, and Dr.
Wan emphasized that with the upgrading of technology, there is still much room
for improvement in conversion efficiency and cost of multi-Si wafers.
It is foreseeable that in the next five years, multi-Si wafers will also dominate the market
.
