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On June 23, the first phase of the Hunan San’an Semiconductor Base with a total investment of 16 billion yuan was officially lighted up and put into production.
It will build the first domestic and the third global silicon carbide vertically integrated industrial chain, which can produce 30,000 6-inch carbides per month.
Silicon wafer
.
Hunan San’an Semiconductor Base is located in the Changsha High-tech Industrial Park, with a planned land area of approximately 1,000 mu.
Ground-breaking construction will start in July 2020.
After it is fully completed, it is expected to achieve annual sales of 12 billion yuan and annual tax revenue of 1.
At the lighting ceremony, Lin Kechuang, vice chairman and general manager of Sanan Optoelectronics Co.
, Ltd.
Silicon carbide, as a representative of the third generation of semiconductors, has superior electrical performance, can meet the new requirements of power electronics technology for high temperature, high power, high voltage, and high frequency.
It has important application value in power electronics, solid-state lighting and other fields.
Hunan San’an Semiconductor is China’s first silicon carbide vertically integrated industrial chain.
It provides flexible and diverse cooperation methods from substrates, epitaxy, foundries, bare die to discrete devices, which is conducive to the formation of a wide area centered on the Changsha High-tech Park.
It is reported that the third-generation semiconductor products of Sanan Optoelectronics have been widely used in power electronics and other fields
.
The company's 2020 financial report shows that as of the end of 2020, the company's power electronic products are mainly high-power density silicon carbide power diodes, MOSFETs and silicon-based gallium nitride power devices
