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Issue 22/2017 - New materials can dramatically increase the speed of electronic storage

 Last Update: 2022-11-13
 Source: Internet
 Author: User

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New materials can greatly improve the speed
of electronic storage Song Zhitang's team at the Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences published a report in the latest issue of the American journal Science that a new type of phase change material has been developed, which is expected to increase the storage speed of electronic products by about
70 times.
It uses alloy materials containing scandium, antimony and tellurium to make a phase change memory cell (PCRAM), which can write at a speed of 700 picoseconds (one picosecond is equivalent to one trillionth of a second).

As a new phase change material, the chemical bond between scandium and tellurium is stable, and a stable "octahedron" primitive is formed in the process of amorphous to polycrystalline conversion, and rapidly "nucleated" to grow into polycrystalline, so that the storage power consumption is reduced and the storage speed is increased
.

Song Zhitang said: "The next step of the team is to use this material on self-developed 64 megabytes and 128 megabytes memory
chips.
”

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