Issue 18/2016 - Carbon nanotransistors outperform silicon transistors for the first time

For the first time, the performance of carbon nanotransistors surpassed the 1-inch size carbon nanotransistors successfully developed by materials scientists at the University of Wisconsin-Madison, and for the first time, they surpassed silicon transistors and gallium arsenide transistors

in performance.
This breakthrough is a major milestone in the development of carbon nanotubes, which will lead to the development of carbon nanotubes in the field of logic circuits, high-speed wireless communications, and other semiconductor electronic devices
.

The ultra-small space of carbon nanotubes allows them to quickly change the direction of the current flowing through them, so it can reach 5 times the speed or energy consumption of silicon transistors is only 1/5
of silicon transistors.
Because some key technical challenges cannot be overcome, carbon nanotransistors lag far behind silicon transistors and gallium arsenide transistors in their use
in computer chips and personal electronics.

The latest carbon nanotransistors obtain 1.
9 times the current of silicon transistors, and for the first time surpass the current highest level of technology
.
Carbon nanotubes are often mixed with metal nanotubes, which can cause short circuits in electronic devices, thereby destroying the conductivity of carbon nanotubes
.
The research team used polymers to obtain unique conditions for removing metal nanotubes, and finally reduced the content of metal nanotubes to less than 0.
01%, which is almost ultra-high purity carbon nanotubes
.