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In recent years, two-dimensional layered semiconductors have become a popular choice for the development of on-chip laser sources and amplifiers due to their excellent chemical and physical properties, such as their dangling bond-free surfaces, atomically thin structures, abundant exciton types and energy valley properties, and strong spatial confineme.
Based on the above research background, Zhang Qing's group from the School of Materials Science and Engineering, Peking University studied the near-infrared lasing behavior of InSe at room temperature, revealed the gain mechanism induced by exciton-exciton scattering, and explored the regulation of fluorescence excitation in the near-infrared region by hydrostatic pressu.
Using mechanically exfoliated InSe microflakes, Zhang Qing's group first demonstrated a room-temperature near-infrared micro-nano laser with a net optical gain of 1029 cm ?1 ( ACS Na.
(a) Laser spectra of mechanically exfoliated InSe flak.
Furthermore, Zhang Qing's research group cooperated with Wei Zhongming and associate professor Wang Min's research group of Southwest University to realize the wide-spectrum hydrostatic pressure regulation of InSe spontaneous emission and fluorescence lasing by using the diamond anvil, the regulation range of which can reach 185nm and 111nm ( Nano Letter.
(a) Schematic diagram of luminescence of 2D InSe flakes regulated by hydrostatic pressure by mechanical exfoliation; (b) 2D color image of PL spectrum as a function of pressure
This series of work has been financially supported by the National Natural Science Foundation of China, the National Key R&D Program, and the Beijing Natural Science Foundati.