Researcher Lu Jin’s research group from the School of Physics published a long article on the research review of sub-10 nm two-dimensional transistors in Physics Report

Large-scale integrated circuits based on field-effect transistors (FETs) are the cornerstone of the information age

(A) Schematic diagram of field effect transistors and corresponding energy bands; (b) The structural comparison between three-dimensional bulk materials and two-dimensional materials.

It is a challenging task to experimentally fabricate two-dimensional transistors with a gate length of sub-10 nm.

Researcher Lu Jin’s research group at the Institute of Condensed Matter Physics and Materials Physics, and the State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, systematically developed a first-principles quantum without parameters at the atomic level in accordance with ITRS and IRDS standards.

Recently, collaborators such as Professor Lei Ming from the School of Science of Beijing University of Posts and Telecommunications and Professor Pan Feng from the School of New Materials of Peking University Shenzhen Graduate School were invited by Lu Jin’s research group to write a titled "Sub-10 nm 2D Field Effect Transistor: Theory and Experiment" ( The long review article of Sub-10 nm two-dimensional transistors: theory and experiment was published in Physics Report , which systematically explained the latest experimental and theoretical research progress of sub-10 nm two-dimensional transistors

Associate Professor Qu Heruge, School of Science, Beijing University of Posts and Telecommunications; Xu Lin, a 2020 PhD candidate in the Department of Electronics, School of Information Science and Technology, Peking University; Liu Shiqi, a 2017 PhD candidate in the School of Physics; Yang Chen, a 2017 PhD candidate in the Institute of Frontier Interdisciplinary Studies, and China Space Technology Associate researcher Wang Yangyang of the Qian Xuesen Space Technology Laboratory of the Institute is the co-first author; Lu Jin, Professor Lei Ming of Beijing University of Posts and Telecommunications, and Professor Pan Feng of Peking University Shenzhen Graduate School are the co-corresponding authors; Yang Yang, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics Professor Jin Bo and Professor Zhang Zhiyong from the Key Laboratory of Nanodevice Physics and Chemistry of the Ministry of Education participated in this work

The above-mentioned work has been supported by the National Natural Science Foundation of China, the National Key Research and Development Program, the State Key Laboratory of Information Photonics and Optical Communications, the Beijing University of Posts and Telecommunications, the Collaborative Innovation Center for Quantum Material Science, the Beijing Key Laboratory of Magnetoelectric Functional Materials and Devices, and the President of Peking University Supported by Triangle Optoelectronics Research Institute and Peking University's high-performance computing platform