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Recently, China's self-developed 4-inch high-purity semi-insulating silicon carbide substrate products came out
.
Experts organized by the China Electronic Materials Industry Association believe that the achievement is leading in China and has reached the international advanced level
.
SiC-based microwave power devices are the core of a new generation of
radar systems due to their high frequency, high power and high temperature resistance.
For a long time, the core material of silicon carbide-based microwave power devices, high-purity semi-insulating silicon carbide substrate products are difficult to produce and process, and have been a domestic blank, and only a few countries in the world have mastered the technology, and have been carrying out a technical blockade and product embargo
on China.
It is understood that silicon carbide-based microwave devices as the most ideal microwave devices in the world today, its power density is 10 times that of existing microwave devices, will become the standard of the next generation of radar technology, the US military jammer and "Aegis" destroyer's phased array radar has begun to replace silicon carbide-based microwave device products, the military market will promote the rapid development
of silicon carbide-based microwave devices in the next few years.
The development of high-purity semi-insulating silicon carbide substrate materials is one of the core topics for
the breakthrough of China's new generation radar system.
The successful development of 4-inch high-purity semi-insulating silicon carbide semiconductor materials has enabled China to have independent and controllable important strategic semiconductor materials, which will be the core of a new generation of radar, satellite communications, communication base stations, and will be applied
in airborne radar systems, ground radar systems, shipborne radar systems and missile-borne radar systems.
(Star)