Heteroepitaxial Technology of 2H-MoTe2 Two-dimensional Semiconductor Thin Films on Any Surface

The semiconductor industry relies on technological innovation to keep pace with device miniaturization and cost reduction

Recently, the seamless integration of two-dimensional (2D) semiconductors with conventional electronic and photonics devices has attracted great interest, leading to new applications for silicon-based chips

Based on the previous two-dimensional molybdenum telluride (MoTe2) phase transition and controllable preparation (J.

Figure 1.

In the experiment, the collaborative team first synthesized millimeter-sized single-crystal 2H-MoTe _{films on} semiconductor Si and GaN, insulating 4H-SiC, SrTiO and sapphire, and magnetic Gd ₃ Ga ₅ O ₁₂ single-crystal substrates , demonstrating the This growth mechanism is not limited by substrate lattice matching .

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In addition, the epitaxy method is also not limited by surface relief

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The collaborative team observed that an in-plane 2D epitaxy process via phase transition is not limited by lattice matching and planar surfaces, thus allowing the synthesis of large-area single-crystalline 2H-MoTe thin films on _arbitrary substrates

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On August 15, 2022, the related research results are titled "Heteroepitaxy of semiconducting 2H-MoTe _{2 thin} films on arbitrary surfaces for large -scale heterogeneous integration") was published online in Nature synthesis .

The above research work has been supported by the National Key R&D Program, the National Natural Science Foundation of China, the Beijing Natural Science Foundation, and the Yangtze River Delta Institute of Optoelectronics at Peking University