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With funding from the National Natural Science Foundation of China (approval numbers: 21825103, 51727809, 11904154), the team of Professor Zhai Tianyou of Huazhong University of Science and Technology has made progress in the preparation of wafer-level van der Waals dielectric films.
“A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film” was published on December 21, 2021 in the journal Nature Electronics
Two-dimensional materials have atomic-level thickness and excellent optoelectronic properties, and have broad application prospects in the field of next-generation optoelectronic devices
.
However, when integrating two-dimensional materials with traditional dielectric materials (such as SiO 2 ) for device integration, the dangling bonds and disordered states on the surface of the dielectric material will seriously affect the properties of the two-dimensional material, making the device performance far inferior to that of the two-dimensional material Intrinsic performance
Inorganic molecular crystal Sb 2 O 3 is different from layered two-dimensional materials such as graphene.
It uses cage-like small molecules without dangling bonds as the structural unit, which is combined by van der Waals forces in the three-dimensional direction (Figure b)
.
During the thermal evaporation process, the molecular structure is maintained (Figure a), and the prepared wafer-level dielectric film has no dangling bonds on the surface (Figure c)
