With funding from the National Natural Science Foundation of China (Approval Numbers: 61622404, 62074098), the research group of Professor Changxin Chen from Shanghai Jiaotong University and collaborators have prepared graphene nanoribbons (GNR) with smooth edges and sub-ten nanometers in width.
Traditional silicon-based transistors have been subject to physical and processing technology limitations as the feature size continues to decrease
In response to the above challenges, the research group of Professor Changxin Chen from Shanghai Jiaotong University, Professor Hongjie Dai of Stanford University and Professor Wendy L.
This research work not only provides a way to prepare narrow and long GNRs with smooth edges, large band gaps and high mobility, but also provides a method to control the types of edges, in order to explore the basic properties of GNRs and their applications in electronics and optoelectronics.
This article is an English version of an article which is originally in the Chinese language on echemi.com and is provided for information purposes only.
This website makes no representation or warranty of any kind, either expressed or implied, as to the accuracy, completeness ownership or reliability of
the article or any translations thereof. If you have any concerns or complaints relating to the article, please send an email, providing a detailed
description of the concern or complaint, to
service@echemi.com. A staff member will contact you within 5 working days. Once verified, infringing content
will be removed immediately.